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Product Details:
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| High Light: | Microelectronics Industry Beryllium Oxide Ceramic,Microelectronics Industry Beryllium Oxide Ceramic,Microelectronics Industry BeO Ceramic |
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Beryllium Oxide Ceramic
We mainly produce beryllium oxide, boron nitride, silicon carbide, corundum mullite ceramic, A-75 ceramic, A-95 ceramic, A-96 ceramic, A-99 ceramic and other ceramic products, which are widely used in aerospace, microelectronics, optoelectronics, communications, electric vacuum and power electronics industries, among which the production technology of beryllium oxide ceramics represents the highest level in China, and the product performance indexes reach the world advanced level.
Technique Data of Beryllium Oxide Ceramic
| Item | Test Conditions | Specification | Unit | |
| B-97 | B-99 | |||
| Dielectric Constant | 1MHz | 6.9士0.4 | 6.9士0.4 | |
| (10士0.5)GHz | ||||
| Dielectric Loss Tangent | 1MHz | ≤4X 10-4 | ≤4X 10-4 | |
| (10士0.5)GHz | ≤8X 10-4 | ≤8X 10-4 | ||
| Volume Resistivity | 25℃ | ≥1014 | ≥1014 | Ω.cm |
| 300℃ | ≥10" | ≥10" | ||
| Breakdown Strength | D C | ≥15 | ≥20 | kV/mm |
| CMOR | - | ≥170 | ≥190 | MPa |
| Average Linear Expansion Coefficient | 25℃~500℃ | (7.0~8.5)*10-4 | (7.0~8.5)*10-4 | I/K |
| Thermal Conductivity | 25℃ | ≥200 | ≥240 | W/m.K |
| 100℃ | ≥160 | ≥190 | ||
| Thermal Shock Resistance | 0℃-800℃ | There should be no cracks | ||
| Bulk Density | ≥2.85 | ≥2.85 | g/ cm3 | |
| Chemical Stability | 1:9HCL | ≤0.3 | ≤0.3 | Mg/cm2 |
| 10% NaOH | ≤0.2 | ≤0.2 | ||
| Air Tightness | - | ≤10*10-11 | ≤10*10-11 | Pa. m3/s |
| Average Grain Size | - | 12~30 | 12~30 | μm |
Contact Person: Mr. Pika
Tel: 86-13838387996
Fax: 86-0371-86555658
